gm 6380 sot-23 w (sot-23 field effect transistors) n n n n -channel -channel -channel -channel enhancement-mode enhancement-mode enhancement-mode enhancement-mode mos mos mos mos fets fets fets fets n n n n ? mos mos mos mos ? maximum maximum maximum maximum ratings ratings ratings ratings ~? characteristic ? symbol ? max ? unit drain - source voltage ? O - ? O? b v dss 60 v gate - source voltage ? O - ? O? v gs + 2 0 v drain current - continuous ? O - Bm i dr 3 a drain current - pulsed ? O - i drm 5 a thermal thermal thermal thermal characteristics characteristics characteristics characteristics characteristic symbol ? max ? unit total device dissipation ? t a = 25 h?? 25 derate above25 ^ 25 fp p d 1000 3 .8 mw mw/ thermal resistance junction to ambient r ja 150 /w junct io n and storage temperature Y??? t j , t stg 150 , -55to+150
electrical electrical electrical electrical characteristics characteristics characteristics characteristics (t a =25 unless otherwise noted of?? 25 ) characteristic ? symbol ? min ? typ ? max ? unit drain - source breakdown voltage ? O - ? O? ( i d = 25 0 u a, v gs =0 v ) b v dss 6 0 v gate threshold voltage ? O _ ? ( i d = 25 0 u a, v gs = v ds ) v gs ( th ) 0.8 1.4 v diode forward voltage drop ? O ( i sd = 1 a, v gs =0 v ) v sd 1 . 5 v zero gate voltage drain current ? ? O (v gs = 0 v, v ds = 60 v) i dss 1 u a gate body leakage ? O ? (v gs = + 20 v, v ds = 0 v) i gss + 100 n a static drain-source on-state resistance ??? ? ( i d = 3 a, v gs = 10 v ) ( i d = 3 a, v gs = 4.5 v ) r ds ( on ) 80 90 10 5 12 5 m input capacitance ? (v gs = 0 v, v ds = 25 v, f=1 mhz) c iss 5 50 pf common source output capacitance ? ? (v gs = 0 v, v ds = 25 v, f=1 mhz) c oss 1 25 pf turn-on time rg (v ds = 30 v, i d = 200ma , r gen = 25 ) t (on) 4 0 ns turn-off time ? rg (v ds = 30 v, i d = 200ma , r gen = 25 ) t (off) 8 0 ns 1. fr-5=1.0 0.75 0.062in. 2. alumina=0.4 0.3 0.024in.99.5%alumina. 3. pulse width < 300 s; duty cycle < 2.0%.
dimension dimension dimension dimension b? (unit) mm
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